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1. Identificação
Tipo de ReferênciaResumo em Evento (Conference Proceedings)
Sitemtc-m21b.sid.inpe.br
Código do Detentorisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identificador8JMKD3MGP3W34P/3PGF4RE
Repositóriosid.inpe.br/mtc-m21b/2017/08.25.17.08   (acesso restrito)
Última Atualização2017:10.03.11.56.44 (UTC) simone
Repositório de Metadadossid.inpe.br/mtc-m21b/2017/08.25.17.08.24
Última Atualização dos Metadados2018:06.04.02.27.45 (UTC) administrator
Chave SecundáriaINPE--PRE/
Chave de CitaçãoPirralhoPeSoOkFoRaAb:2017:TrNePo
TítuloTransition from negative to positive photoconductivity in p-type Pb1-xEuxTe films
Ano2017
Data de Acesso11 maio 2024
Tipo SecundárioPRE CN
Número de Arquivos1
Tamanho1035 KiB
2. Contextualização
Autor1 Pirralho, Marília de J. P.
2 Peres, Marcelo L.
3 Soares, Demétrio A. W.
4 Okasaki, Anderson K.
5 Fornari, Celso Israel
6 Rappl, Paulo Henrique de Oliveira
7 Abramof, Eduardo
Identificador de Curriculo1
2
3
4
5
6 8JMKD3MGP5W/3C9JJ37
7 8JMKD3MGP5W/3C9JGUH
Grupo1
2
3
4
5 CMS-ETES-SESPG-INPE-MCTIC-GOV-BR
6 LABAS-COCTE-INPE-MCTIC-GOV-BR
Afiliação1
2
3
4
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Instituto Nacional de Pesquisas Espaciais (INPE)
7 Instituto Nacional de Pesquisas Espaciais (INPE)
Endereço de e-Mail do Autor1
2
3
4
5 celso.fornari@inpe.br
6 paulo.rappl@inpe.br
7 eduardo.abramof@inpe.br
Nome do EventoBrazilian Workshop on Semiconductor Physics, 18 (BWSP)
Localização do EventoMaresias, SP
Data14-18 ago.
Título do LivroResumos
Histórico (UTC)2017-08-25 17:08:49 :: simone -> administrator :: 2017
2017-09-18 04:40:57 :: administrator -> simone :: 2017
2017-10-03 11:56:44 :: simone -> administrator :: 2017
2018-01-09 11:47:05 :: administrator -> simone :: 2017
2018-01-09 18:26:59 :: simone -> administrator :: 2017
2018-06-04 02:27:45 :: administrator -> simone :: 2017
3. Conteúdo e estrutura
É a matriz ou uma cópia?é a matriz
Estágio do Conteúdoconcluido
Transferível1
Tipo do ConteúdoExternal Contribution
Tipo de Versãopublisher
ResumoThe phenomenon of photoconductivity has been used as an important tool to investigate the presence of additional states within the band structure of semiconductors [1] and has provided basic knowledge that allowed the development of photodetector and sensor devices along the last decades [2]. We investigated the photoconductivity effect in p-type Pb1-xEuxTe films for x=0.01, 0.02, 0.03, 0.05 and 0.06 at T=300K. The measurements revealed a clear transition from negative to positive photoconductivity as the Eu content x is increased at room temperature. This transition is related to the metal-insulator transition that occurs due to the disorder originated from the introduction of Eu atoms and it is an Anderson transition. Our investigation found that, from the potential application point of view, the sample x=0.06 is more suitable, i.e. it presents an almost noise free signal and the higher photoconductivity amplitude response observed. The photoconductive for the sample with x=0.06 was further investigated in the temperature range of 77 300K and, surprisingly, multiple additional transitions were observed with amplitudes that reached around 200 times the original value before illumination. We show that this anomalous behavior is a consequence of the generation and recombination rates between the bands and the 4f level and a defect level located inside the bandgap. The main goal of this work is to make a prospective study of NPC effect in p-type Pb1-xEuxTe films in both sides of the metal-insulator transition aiming to possible new applications in the development of photonic devices that operate from low temperature up to room temperature. Acknowledgments: The authors would like to acknowledge CAPES and FAPEMIG for support. References: [1] M. M. Furchi et al, Nano Letters 14, 6165-6170 (2014); [2] R. Jaramillo et al, Jour. Appl. Phys. 119, 035101 (2016).
ÁreaFISMAT
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4. Condições de acesso e uso
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Grupo de Usuáriossimone
Grupo de Leitoresadministrator
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Visibilidadeshown
Permissão de Leituradeny from all and allow from 150.163
Permissão de Atualizaçãonão transferida
5. Fontes relacionadas
Vinculação8JMKD3MGP3W34P/3NAEMRH
Repositório Espelhosid.inpe.br/mtc-m21b/2013/09.26.14.25.22
Unidades Imediatamente Superiores8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3F358GL
Lista de Itens Citandosid.inpe.br/mtc-m21/2012/07.13.14.57.50 3
sid.inpe.br/mtc-m21/2012/07.13.14.44.57 2
Acervo Hospedeirosid.inpe.br/mtc-m21b/2013/09.26.14.25.20
6. Notas
Campos Vaziosarchivingpolicy archivist callnumber copyholder copyright creatorhistory descriptionlevel dissemination doi e-mailaddress edition editor format isbn issn keywords label lineage mark nextedition notes numberofvolumes orcid organization pages parameterlist parentrepositories previousedition previouslowerunit progress project publisher publisheraddress rightsholder schedulinginformation secondarydate secondarymark serieseditor session shorttitle sponsor subject targetfile tertiarytype type url volume
7. Controle da descrição
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